The company strengthens its APS™ patent portfolio in the world’s single most important semiconductor market.
Lund, Sweden – February 5, 2026 – AlixLabs today announced that the Taiwan Intellectual Property Office (TIPO) has issued a Notice of Allowance for a patent application covering selective etching methods for nanostructures, strengthening the company’s intellectual property portfolio in advanced semiconductor manufacturing.
The allowed claims relate to a maskless selective etching process that enables highly controlled material removal at the nanoscale by exploiting topographical etch selectivity. The invention allows selective etching of horizontal surfaces relative to inclined or faceted surfaces, enabling the formation of extremely fine features without additional lithography steps.
The now allowed patent covers nanostructures, directed towards applications in advanced transistor architectures such as FinFET and gate-all-around (GAA) devices, where precise dimensional control below 20 nm is critical.
“This allowance further validates AlixLabs’ core approach to maskless nanofabrication,” said Dmitry Suyatin, CSO at AlixLabs. “Selective etching based on surface topography enables new scaling paths while reducing process complexity and cost, which is increasingly important for next-generation logic and memory devices.”
The Taiwan allowance is part of AlixLabs’ broader patent family originating from the company’s foundational work on selective etching of nanostructures, with corresponding filings in multiple jurisdictions. Taiwan is a strategically important market due to its central role in global semiconductor manufacturing ecosystem.
Following completion of the remaining formalities, the patent is expected to proceed to grant.
